MITSUBISHI PM75RG1B120 TRANS.IGBT PM75RG1B120-300G 75A 1200V G1 SERISI IP
MITSUBISHI PM75RG1B120 TRANS.IGBT PM75RG1B120-300G 75A 1200V G1 SERISI IP
*The image is for illustration purposes only.

PM75RG1B120

Manufacturer
MITSUBISHI
Manufacturer Product Number
PM75RG1B120
Description
TRANS.IGBT PM75RG1B120-300G 75A 1200V G1 SERISI IP
Detailed Description
-
Manufacturer Standard Lead Time

4-5 Weeks

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Manufacturer
Package Type
BOX
Product Status
-
RoHS Status
RoHS Compliant
Mounting Type
Chassis
Package / Case
55x120Case
Technology
Intelligent Power
Diode
With Diode
Current (Ic) (25°C)
75 A
Current (Ic)
75 A
Current Temperature (IC)
25 °C
Voltage
1200 V
VCE Sat
1.3 V
Power Dissipation
480 W
Configuration
Seven
Junction Temperature (Tj)
150 °C
Operating Temperature
-20 °C ~ +150
Additional Documentation
N/A
In Stock:
0
MPQ:10
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.