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MG8Q6ES1
Manufacturer
TOSHIBA
Manufacturer Product Number
MG8Q6ES1
Description
IGBT MOD.DIODE SIX 8A 1200V GTR
Detailed Description
-
Manufacturer Standard Lead Time
71-72 Weeks
On Order
No
Datasheet
-Customer Reference
Product Details
TYPE
DESCRIPTION
Category
Manufacturer
Package Type
BOX
Product Status
OBSOLETE
RoHS Status
RoHS Non-Compliant
Mounting Type
Chassis
Package / Case
45x107Case
Technology
GTR
Diode
With Diode
Current (Ic) (25°C)
8 A
Current (Ic)
8 A
Current Temperature (IC)
25 °C
Voltage
1200 V
VCE Sat
3 V
Power Dissipation
50 W
Configuration
Six
Junction Temperature (Tj)
150 °C
Operating Temperature
-40 °C ~ +125 °C
Additional Documentation
N/A
In Stock:
1
MPQ:1
|
MOQ:1
|
Multiple:1
| Packaging | Quantity | Unit Price | Extended Price |
|---|
Information
If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.
Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.
