TOSHIBA MG300Q1US1 IGBT DIS. DIODE SINGLE 1200V 300A
TOSHIBA MG300Q1US1 IGBT DIS. DIODE SINGLE 1200V 300A
*The image is for illustration purposes only.

MG300Q1US1

Manufacturer
TOSHIBA
Manufacturer Product Number
MG300Q1US1
Description
IGBT DIS. DIODE SINGLE 1200V 300A
Detailed Description
-
Manufacturer Standard Lead Time

71-72 Weeks

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Category
Manufacturer
Package Type
BOX
Product Status
OBSOLETE
RoHS Status
RoHS Non-Compliant
Mounting Type
Chassis
Package / Case
62x108Case
Technology
High Power Switching
Diode
With Diode
Current (Ic) (25°C)
300 A
Current (Ic)
300 A
Current Temperature (IC)
N/A
Voltage
1200 V
VCE Sat
2.2 V
Power Dissipation
2 kW
Configuration
Single
Junction Temperature (Tj)
150 °C
Operating Temperature
N/A
Additional Documentation
N/A
In Stock:
0
MPQ:1
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.