IXYS-LITTELFUSE MWI80-12T6K IGBT MOD.DIODE SIX 56A 1200V SOA E1-PACK CHASSIS
IXYS-LITTELFUSE MWI80-12T6K IGBT MOD.DIODE SIX 56A 1200V SOA E1-PACK CHASSIS
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MWI80-12T6K

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
MWI80-12T6K
Description
IGBT MOD.DIODE SIX 56A 1200V SOA E1-PACK CHASSIS
Detailed Description
-
Manufacturer Standard Lead Time

-

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Category
Manufacturer
Package Type
BOX
Product Status
-
RoHS Status
RoHS Compliant
Mounting Type
Chassis
Package / Case
E1-Pack
Technology
SOA Capability
Diode
With Diode
Current (Ic) (25°C)
80 A
Current (Ic)
56 A
Current Temperature (IC)
80 °C
Voltage
1200 V
VCE Sat
2 V
Power Dissipation
270 W
Configuration
Six
Junction Temperature (Tj)
150 °C
Operating Temperature
-40 °C ~ +125 °C
Additional Documentation
N/A
In Stock:
0
MPQ:10
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.