IXYS-LITTELFUSE MIXD80PM650TMI IGBT MOD.DIODE FOUR 60A 600V H BRIDGE E2PACK
IXYS-LITTELFUSE MIXD80PM650TMI IGBT MOD.DIODE FOUR 60A 600V H BRIDGE E2PACK
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MIXD80PM650TMI

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
MIXD80PM650TMI
Description
IGBT MOD.DIODE FOUR 60A 600V H BRIDGE E2PACK
Detailed Description
-
Manufacturer Standard Lead Time

-

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Category
Manufacturer
Package Type
BOX
Product Status
-
RoHS Status
RoHS Compliant
Mounting Type
Chassis
Package / Case
EASY2B
Technology
XPT
Diode
With Diode
Current (Ic) (25°C)
108 A
Current (Ic)
82 A
Current Temperature (IC)
80 °C
Voltage
650 V
VCE Sat
1.5 V
Power Dissipation
375 W
Configuration
Four
Junction Temperature (Tj)
150 °C
Operating Temperature
-40 °C ~ +150 °C
Additional Documentation
N/A
In Stock:
6
MPQ:20
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.