IXYS-LITTELFUSE MIXD200W650TEH IGBT MOD.DIODE SIX 210A 650V TRENCH E3PACK
IXYS-LITTELFUSE MIXD200W650TEH IGBT MOD.DIODE SIX 210A 650V TRENCH E3PACK
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MIXD200W650TEH

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
MIXD200W650TEH
Description
IGBT MOD.DIODE SIX 210A 650V TRENCH E3PACK
Detailed Description
-
Manufacturer Standard Lead Time

-

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Category
Manufacturer
Package Type
BOX
Product Status
-
RoHS Status
RoHS Compliant
Mounting Type
Chassis
Package / Case
E3-Pack
Technology
Trench
Diode
With Diode
Current (Ic) (25°C)
280 A
Current (Ic)
210 A
Current Temperature (IC)
80 °C
Voltage
650 V
VCE Sat
1.5 V
Power Dissipation
680 W
Configuration
Six
Junction Temperature (Tj)
175 °C
Operating Temperature
-40 °C ~ +150 °C
Additional Documentation
N/A
In Stock:
6
MPQ:5
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.