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MII200-12A4
Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
MII200-12A4
Description
IGBT MOD.DIODE DUAL 180A 1200V SOA Y3-DCB CHASSIS
Detailed Description
-
Manufacturer Standard Lead Time
-
On Order
No
Datasheet
Customer Reference
Product Details
TYPE
DESCRIPTION
Category
Manufacturer
Package Type
BOX
Product Status
OBSOLETE
RoHS Status
RoHS Compliant
Mounting Type
Chassis
Package / Case
Y3-DCB
Technology
SOA Capability
Diode
With Diode
Current (Ic) (25°C)
270 A
Current (Ic)
180 A
Current Temperature (IC)
80 °C
Voltage
1200 V
VCE Sat
2.2 V
Power Dissipation
1.13 kW
Configuration
Dual
Junction Temperature (Tj)
150 °C
Operating Temperature
-40 °C ~ +150 °C
Additional Documentation
N/A
In Stock:
0
MPQ:2
|
MOQ:1
|
Multiple:1
| Packaging | Quantity | Unit Price | Extended Price |
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Information
If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.
Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.
