IXYS-LITTELFUSE MIEB101W1200EH IGBT MOD.DIODE SIX 128A 1200V SPT E3-PACK CHASSIS
IXYS-LITTELFUSE MIEB101W1200EH IGBT MOD.DIODE SIX 128A 1200V SPT E3-PACK CHASSIS
*The image is for illustration purposes only.

MIEB101W1200EH

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
MIEB101W1200EH
Description
IGBT MOD.DIODE SIX 128A 1200V SPT E3-PACK CHASSIS
Detailed Description
-
Manufacturer Standard Lead Time

-

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Category
Manufacturer
Package Type
BOX
Product Status
NRND
RoHS Status
RoHS Compliant
Mounting Type
Chassis
Package / Case
E3-Pack
Technology
SPT
Diode
With Diode
Current (Ic) (25°C)
183 A
Current (Ic)
128 A
Current Temperature (IC)
80 °C
Voltage
1200 V
VCE Sat
1.8 V
Power Dissipation
630 W
Configuration
Six
Junction Temperature (Tj)
150 °C
Operating Temperature
-40 °C ~ +125 °C
Additional Documentation
N/A
In Stock:
0
MPQ:5
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.