IXYS-LITTELFUSE IXXN110N65B4H1 IGBT MOD.DIODE SINGLE 110A 650V XPT SOT227B
IXYS-LITTELFUSE IXXN110N65B4H1 IGBT MOD.DIODE SINGLE 110A 650V XPT SOT227B
*The image is for illustration purposes only.

IXXN110N65B4H1

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
IXXN110N65B4H1
Description
IGBT MOD.DIODE SINGLE 110A 650V XPT SOT227B
Detailed Description
-
Manufacturer Standard Lead Time

-

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Category
Manufacturer
Package Type
TUBE
Product Status
-
RoHS Status
RoHS Compliant
Mounting Type
Chassis
Package / Case
SOT227B (Minibloc)
Technology
XPT
Diode
With Diode
Current (Ic) (25°C)
230 A
Current (Ic)
110 A
Current Temperature (IC)
110 °C
Voltage
650 V
VCE Sat
2.1 V
Power Dissipation
750 W
Configuration
Single
Junction Temperature (Tj)
175 °C
Operating Temperature
-55 °C ~ +175 °C
Additional Documentation
N/A
In Stock:
0
MPQ:10
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.