FUJI ELECTRIC 2MBI200HJ-120-50 IGBT MOD.DIODE DUAL 200A 1200V H SERIES
FUJI ELECTRIC 2MBI200HJ-120-50 IGBT MOD.DIODE DUAL 200A 1200V H SERIES
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2MBI200HJ-120-50

Manufacturer
FUJI ELECTRIC
Manufacturer Product Number
2MBI200HJ-120-50
Description
IGBT MOD.DIODE DUAL 200A 1200V H SERIES
Detailed Description
-
Manufacturer Standard Lead Time

- Weeks

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Category
Manufacturer
Package Type
BOX
Product Status
OBSOLETE
RoHS Status
RoHS Compliant
Mounting Type
Chassis
Package / Case
62x108Case (M276)
Technology
H Series
Diode
With Diode
Current (Ic) (25°C)
275 A
Current (Ic)
200 A
Current Temperature (IC)
80 °C
Voltage
1200 V
VCE Sat
3.6 V
Power Dissipation
1.385 kW
Configuration
Dual
Junction Temperature (Tj)
150 °C
Operating Temperature
-40 °C ~ +125 °C
Additional Documentation
N/A
In Stock:
0
MPQ:10
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.