IXYS-LITTELFUSE IXXP12N65B4D1 IGBT DIS.DIODE SINGLE 12A 650V XPT TO220AB
IXYS-LITTELFUSE IXXP12N65B4D1 IGBT DIS.DIODE SINGLE 12A 650V XPT TO220AB
*The image is for illustration purposes only.

IXXP12N65B4D1

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
IXXP12N65B4D1
Description
IGBT DIS.DIODE SINGLE 12A 650V XPT TO220AB
Detailed Description
-
Manufacturer Standard Lead Time

-

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Manufacturer
Package Type
TUBE
Product Status
OBSOLETE
RoHS Status
RoHS Compliant
Mounting Type
THT
Package / Case
TO220AB
Technology
XPT
Diode
With Diode
Current (Ic) (25°C)
38 A
Current (Ic)
12 A
Current Temperature (IC)
110 °C
Voltage
650 V
VCE Sat
1.95 V
Power Dissipation
160 W
Configuration
Single
Junction Temperature (Tj)
175 °C
Operating Temperature
-55 °C ~ +175 °C
Additional Documentation
N/A
In Stock:
0
MPQ:50
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.