IXYS-LITTELFUSE IXXH30N65C4D1 IGBT DIS.DIODE SINGLE 30A 650V XPT TO247-3
IXYS-LITTELFUSE IXXH30N65C4D1 IGBT DIS.DIODE SINGLE 30A 650V XPT TO247-3
*The image is for illustration purposes only.

IXXH30N65C4D1

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
IXXH30N65C4D1
Description
IGBT DIS.DIODE SINGLE 30A 650V XPT TO247-3
Detailed Description
-
Manufacturer Standard Lead Time

-

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Manufacturer
Package Type
TUBE
Product Status
OBSOLETE
RoHS Status
RoHS Compliant
Mounting Type
THT
Package / Case
TO247-3
Technology
GENX4
Diode
With Diode
Current (Ic) (25°C)
62 A
Current (Ic)
30 A
Current Temperature (IC)
110 °C
Voltage
650 V
VCE Sat
2.15 V
Power Dissipation
230 W
Configuration
Single
Junction Temperature (Tj)
175 °C
Operating Temperature
-55 °C ~ +175 °C
Additional Documentation
N/A
In Stock:
110
MPQ:30
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.