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IXGR55N120A3H1
Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
IXGR55N120A3H1
Description
IGBT DIS.DIODE SiC SINGLE 30A 1200V GENX3 ISOPLUS2
Detailed Description
-
Manufacturer Standard Lead Time
-
On Order
No
Datasheet
Customer Reference
Product Details
TYPE
DESCRIPTION
Category
Manufacturer
Package Type
TUBE
Product Status
-
RoHS Status
RoHS Compliant
Mounting Type
THT
Package / Case
ISOPLUS247
Technology
GENX3
Diode
With Diode SiC
Current (Ic) (25°C)
70 A
Current (Ic)
30 A
Current Temperature (IC)
110 °C
Voltage
1200 V
VCE Sat
2.35 V
Power Dissipation
200 W
Configuration
Single
Junction Temperature (Tj)
150 °C
Operating Temperature
-55 °C ~ +150 °C
Additional Documentation
N/A
In Stock:
0
MPQ:30
|
MOQ:1
|
Multiple:1
| Packaging | Quantity | Unit Price | Extended Price |
|---|
Information
If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.
Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.
