*The image is for illustration purposes only.
IXBT42N170
Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
IXBT42N170
Description
IGBT DIS.DIODE SINGLE 42A 1700V BIMOSFET TO268(D3P
Detailed Description
-
Manufacturer Standard Lead Time
-
On Order
No
Datasheet
Customer Reference
Product Details
TYPE
DESCRIPTION
Category
Manufacturer
Package Type
TUBE
Product Status
-
RoHS Status
RoHS Compliant
Mounting Type
SMT
Package / Case
TO268 (D3PAK)
Technology
BiMOSFET
Diode
With Diode
Current (Ic) (25°C)
80 A
Current (Ic)
42 A
Current Temperature (IC)
90 °C
Voltage
1700 V
VCE Sat
2.8 V
Power Dissipation
360 W
Configuration
Single
Junction Temperature (Tj)
150 °C
Operating Temperature
-55 °C ~ +150 °C
Additional Documentation
N/A
In Stock:
300
MPQ:30
|
MOQ:1
|
Multiple:1
| Packaging | Quantity | Unit Price | Extended Price |
|---|
Information
If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.
Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.
