IXYS-LITTELFUSE IXBT2N250-TR IGBT DIS.DIODE SINGLE 2A 2500V BIMOSFET TO268(D3PA
IXYS-LITTELFUSE IXBT2N250-TR IGBT DIS.DIODE SINGLE 2A 2500V BIMOSFET TO268(D3PA
*The image is for illustration purposes only.

IXBT2N250-TR

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
IXBT2N250-TR
Description
IGBT DIS.DIODE SINGLE 2A 2500V BIMOSFET TO268(D3PA
Detailed Description
-
Manufacturer Standard Lead Time

-

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Manufacturer
Package Type
TAPE&REEL
Product Status
-
RoHS Status
RoHS Compliant
Mounting Type
SMT
Package / Case
TO268 (D3PAK)
Technology
BiMOSFET
Diode
With Diode
Current (Ic) (25°C)
5 A
Current (Ic)
2 A
Current Temperature (IC)
110 °C
Voltage
2500 V
VCE Sat
3.8 V
Power Dissipation
32 W
Configuration
Single
Junction Temperature (Tj)
150 °C
Operating Temperature
-55 °C ~ +150 °C
Additional Documentation
N/A
In Stock:
0
MPQ:400
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.