IXYS-LITTELFUSE IXBT16N360HV IGBT DIS.DIODE SINGLE 16A 3600V BIMOSFET TO268 (D3
IXYS-LITTELFUSE IXBT16N360HV IGBT DIS.DIODE SINGLE 16A 3600V BIMOSFET TO268 (D3
*The image is for illustration purposes only.

IXBT16N360HV

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
IXBT16N360HV
Description
IGBT DIS.DIODE SINGLE 16A 3600V BIMOSFET TO268 (D3
Detailed Description
-
Manufacturer Standard Lead Time

1-2 Weeks

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Manufacturer
Package Type
TUBE
Product Status
NRND
RoHS Status
RoHS Compliant
Mounting Type
SMT
Package / Case
TO268 (D3PAK)
Technology
BiMOSFET
Diode
With Diode
Current (Ic) (25°C)
48 A
Current (Ic)
16 A
Current Temperature (IC)
110 °C
Voltage
3600 V
VCE Sat
2.5 V
Power Dissipation
270 W
Configuration
Single
Junction Temperature (Tj)
150 °C
Operating Temperature
-55 °C ~ +150 °C
Additional Documentation
N/A
In Stock:
0
MPQ:30
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.