IXYS-LITTELFUSE IXBL60N360 IGBT DIS.DIODE SINGLE 36A 3600V BIMOSFET ISOPLUSI5
IXYS-LITTELFUSE IXBL60N360 IGBT DIS.DIODE SINGLE 36A 3600V BIMOSFET ISOPLUSI5
*The image is for illustration purposes only.

IXBL60N360

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
IXBL60N360
Description
IGBT DIS.DIODE SINGLE 36A 3600V BIMOSFET ISOPLUSI5
Detailed Description
-
Manufacturer Standard Lead Time

-

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Manufacturer
Package Type
TUBE
Product Status
NRND
RoHS Status
RoHS Compliant
Mounting Type
THT
Package / Case
ISOPLUSI5-PAC
Technology
BiMOSFET
Diode
With Diode
Current (Ic) (25°C)
92 A
Current (Ic)
36 A
Current Temperature (IC)
110 °C
Voltage
3600 V
VCE Sat
2.8 V
Power Dissipation
417 W
Configuration
Single
Junction Temperature (Tj)
150 °C
Operating Temperature
-55 °C ~ +150 °C
Additional Documentation
N/A
In Stock:
0
MPQ:25
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.