IXYS-LITTELFUSE IXBH9N160G IGBT DIS.DIODE SINGLE 5A 1600V BIMOSFET TO247
IXYS-LITTELFUSE IXBH9N160G IGBT DIS.DIODE SINGLE 5A 1600V BIMOSFET TO247
*The image is for illustration purposes only.

IXBH9N160G

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
IXBH9N160G
Description
IGBT DIS.DIODE SINGLE 5A 1600V BIMOSFET TO247
Detailed Description
-
Manufacturer Standard Lead Time

-

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Manufacturer
Package Type
TUBE
Product Status
-
RoHS Status
RoHS Compliant
Mounting Type
THT
Package / Case
TO247-3
Technology
BiMOSFET
Diode
With Diode
Current (Ic) (25°C)
9 A
Current (Ic)
5 A
Current Temperature (IC)
90 °C
Voltage
1600 V
VCE Sat
7 V
Power Dissipation
100 W
Configuration
Single
Junction Temperature (Tj)
150 °C
Operating Temperature
-55 °C ~ +150 °C
Additional Documentation
N/A
In Stock:
300
MPQ:30
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.