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IXBF50N360
Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
IXBF50N360
Description
IGBT DIS.DIODE SINGLE 28A 3600V BIMOSFET ISOPLUSI4
Detailed Description
-
Manufacturer Standard Lead Time
-
On Order
No
Datasheet
Customer Reference
Product Details
TYPE
DESCRIPTION
Category
Manufacturer
Package Type
TUBE
Product Status
OBSOLETE
RoHS Status
RoHS Compliant
Mounting Type
THT
Package / Case
ISOPLUS i4-Pak
Technology
BiMOSFET
Diode
With Diode
Current (Ic) (25°C)
70 A
Current (Ic)
28 A
Current Temperature (IC)
110 °C
Voltage
3600 V
VCE Sat
2.4 V
Power Dissipation
290 W
Configuration
Single
Junction Temperature (Tj)
150 °C
Operating Temperature
-55 °C ~ +150 °C
Additional Documentation
N/A
In Stock:
0
MPQ:25
|
MOQ:1
|
Multiple:1
| Packaging | Quantity | Unit Price | Extended Price |
|---|
Information
If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.
Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.
