IXYS-LITTELFUSE IXBF32N300 IGBT DIS.DIODE SINGLE 22A 3000V BIMOSFET ISOPLUSI4
IXYS-LITTELFUSE IXBF32N300 IGBT DIS.DIODE SINGLE 22A 3000V BIMOSFET ISOPLUSI4
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IXBF32N300

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
IXBF32N300
Description
IGBT DIS.DIODE SINGLE 22A 3000V BIMOSFET ISOPLUSI4
Detailed Description
-
Manufacturer Standard Lead Time

-

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Manufacturer
Package Type
TUBE
Product Status
-
RoHS Status
RoHS Compliant
Mounting Type
THT
Package / Case
ISOPLUS i4-Pak
Technology
BiMOSFET
Diode
With Diode
Current (Ic) (25°C)
40 A
Current (Ic)
22 A
Current Temperature (IC)
90 °C
Voltage
3000 V
VCE Sat
2.8 V
Power Dissipation
160 W
Configuration
Single
Junction Temperature (Tj)
150 °C
Operating Temperature
-55 °C ~ +150 °C
Additional Documentation
N/A
In Stock:
0
MPQ:25
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.