IXYS-LITTELFUSE FII50-12ER IGBT DIS.DIODE DUAL 32A 1200V NPT3 ISOPLUS i4-PAC
IXYS-LITTELFUSE FII50-12ER IGBT DIS.DIODE DUAL 32A 1200V NPT3 ISOPLUS i4-PAC
*The image is for illustration purposes only.

FII50-12ER

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
FII50-12ER
Description
IGBT DIS.DIODE DUAL 32A 1200V NPT3 ISOPLUS i4-PAC
Detailed Description
-
Manufacturer Standard Lead Time

-

On Order
No
Datasheet
-
Customer Reference

Product Details

TYPE
DESCRIPTION
Manufacturer
Package Type
TUBE
Product Status
OBSOLETE
RoHS Status
RoHS Compliant
Mounting Type
THT
Package / Case
ISOPLUS i4-PAC
Technology
NPT3
Diode
With Diode
Current (Ic) (25°C)
50 A
Current (Ic)
32 A
Current Temperature (IC)
90 °C
Voltage
1200 V
VCE Sat
2 V
Power Dissipation
200 W
Configuration
Dual
Junction Temperature (Tj)
150 °C
Operating Temperature
-55 °C ~ +150 °C
Additional Documentation
N/A
In Stock:
1,919
MPQ:24
|
MOQ:1
|
Multiple:1
PackagingQuantityUnit PriceExtended Price

Information

If you place your order before 2:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.