IXYS-LITTELFUSE IXXR110N65B4H1 IGBT DIS.SINGLE 150A 650V GENX4 TO-247-3
IXYS-LITTELFUSE IXXR110N65B4H1 IGBT DIS.SINGLE 150A 650V GENX4 TO-247-3
*The image is for illustration purposes only.

IXXR110N65B4H1

Manufacturer
IXYS-LITTELFUSE
Manufacturer Product Number
IXXR110N65B4H1
Description
IGBT DIS.SINGLE 150A 650V GENX4 TO-247-3
Detailed Description
-
Manufacturer Standard Lead Time

-

On Order
No
Datasheet
Customer Reference

Product Details

TYPE
DESCRIPTION
Manufacturer
Package Type
TUBE
Product Status
-
RoHS Status
RoHS Compliant
Mounting Type
THT
Package / Case
ISOPLUS247
Technology
GENX4
Diode
With Diode
Current (Ic) (25°C)
165 A
Current (Ic)
70 A
Current Temperature (IC)
110 °C
Voltage
650 V
VCE Sat
1.72 V
Power Dissipation
455 W
Configuration
Single
Junction Temperature (Tj)
175 °C
Operating Temperature
-55 °C ~ +175 °C
Additional Documentation
N/A
In Stock:
1,003
MPQ:25
|
MOQ:1
|
Multiple:1

TUBE

Quantity
Unit Price
Extended Price
1
27.0400 USD
27.0400 USD
10
25.0371 USD
250.370 USD
25
23.0341 USD
575.850 USD
125
22.1127 USD
2,764.09 USD

Information

If you place your order before 12:00 PM Türkiye Time (GMT+3), it will be shipped the same day.

Özdisan reserves the right to ship the order on the next business day, depending on the product quantity.