Bulunan sonuçlar: 150 | | | | |
Bulunan sonuçlar: 150
| Görsel |
Ürün Adı
|
Stok
|
Miktar | Manufacturer |
Series
|
Diode
Configuration |
Mounting
Type |
Package
/
Case |
Polarity
|
Average
Rectified
Current |
Peak
Repetitive
Reverse
Voltage
(VRRM) |
Reverse
Recovery
Time
(Trr) |
Applications
|
Operating
Temperature |
Rohs
|
Packaging
|
Min.Paketleme Adedi |
Min.Sipariş Adedi |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SK26A-TSC |
|
|
TAIWAN SEMIC. | Schottky Rect. | Single | SMT | DO214AC (SMA) | Cathode | 2A | 60V | N/A | General Purpose | -55°C~+150°C | ROHS | TAPE&REEL | 7.500 | 10 |
|
|
SS115 |
|
|
TAIWAN SEMIC. | 7.500 | 5 | ||||||||||||
|
|
SK39A-TSC |
|
|
TAIWAN SEMIC. | Schottky Rect. | Single | SMT | DO214AC (SMA) | Cathode | 3A | 90V | N/A | General Purpose | -55°C~+150°C | ROHS | TAPE&REEL | 7.500 | 2 |
|
WNSC12650T6J |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DFN8X8 | None | 12A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
WNSC2D03650MBJ |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DO214AA (SMB) | Cathode | 3A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
WNSC04650T6J |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DFN8X8 | None | 4A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
UPS115UE3/TR7 |
|
|
MICROSEMI | Schottky Rect. | Single | SMT | DO216AA (PowerMITE) | Cathode | 1A | 15V | N/A | N/A | -55°C~+100°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
WNSC2D06650TJ |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DFN8X8 | None | 6A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
WNSC2D04650TJ |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DFN8X8 | None | 4A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
WNSC2D08650TJ |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DFN8X8 | None | 8A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
WNSC06650T6J |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DFN8X8 | None | 6A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
WNSC6D01650MBJ |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DO214AA (SMB) | Cathode | 1A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
WNSC2D10650TJ |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DFN8X8 | None | 10A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
WNSC08650T6J |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DFN8X8 | None | 8A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
WNSC10650T6J |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DFN8X8 | None | 10A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
WNSC2D12650TJ |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DFN8X8 | None | 12A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
WNSC6D10650T6J |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DFN8X8 | None | 10A | 650V | N/A | General Purpose | -55°C~+175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
WNSC2D021200D6J |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | TO252 (DPAK) | N/A | 2A | 1.2kV | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 2.500 | 1 |
|
|
WNSC2D04650DJ |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | TO252 (DPAK) | N/A | 4A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 2.500 | 1 |
|
|
WNSC2D06650DJ |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | TO252 (DPAK) | N/A | 6A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 2.500 | 1 |
