Bulunan sonuçlar: 4218 | | | | |
Bulunan sonuçlar: 4218
| Görsel |
Ürün Adı
|
Stok
|
Miktar | Manufacturer |
Mounting
Type |
Package
/
Case |
Technology
|
Fet
Type |
Current
(25°C) |
Voltage
|
Rds
On |
Power
Dissipation |
Trr
|
Configuration
|
Applications
|
Operating
Temperature |
Rohs
|
Packaging
|
Min.Paketleme Adedi |
Min.Sipariş Adedi |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WNSCM160120WQ |
|
|
WEEN SEMICONDUCTORS | THT | TO247-3 | Silicon Carbide (SiC) | N-CH | 24A | 1.2kV | 160m Ohms | 155W | 38ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSC2M1K0170WQ |
|
|
WEEN SEMICONDUCTORS | THT | TO247-3 | Silicon Carbide (SiC) | N-CH | 7A | 1.7kV | 1 Ohms | 79W | 36ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSCM80120WQ |
|
|
WEEN SEMICONDUCTORS | THT | TO247-3 | Silicon Carbide (SiC) | N-CH | 42A | 1.2kV | 80m Ohms | 230W | 36ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSC2M75120W6Q |
253
|
|
WEEN SEMICONDUCTORS | THT | TO247-3 | Silicon Carbide (SiC) | N-CH | 33.7A | 1.2kV | 75m Ohms | 184W | 21ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
WNSC2M40120R6Q |
250
|
|
WEEN SEMICONDUCTORS | THT | TO247-4L | Silicon Carbide (SiC) | N-CH | 73A | 1.2kV | 40m Ohms | 405W | 52ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSC2M20120R6Q |
774
|
|
WEEN SEMICONDUCTORS | THT | TO247-4L | Silicon Carbide (SiC) | N-CH | 133A | 1.2kV | 20m Ohms | 750W | 54ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSCM80120RQ |
|
|
WEEN SEMICONDUCTORS | THT | TO247-4L | Silicon Carbide (SiC) | N-CH | 45A | 1.2kV | 80m Ohms | 270W | 36ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSC2M40120W6Q |
261
|
|
WEEN SEMICONDUCTORS | THT | TO247-3 | Silicon Carbide (SiC) | N-CH | 64A | 1.2kV | 40m Ohms | 306W | 52ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSC2M75120R6Q |
257
|
|
WEEN SEMICONDUCTORS | THT | TO247-4L | Silicon Carbide (SiC) | N-CH | 42.8A | 1.2kV | 75m Ohms | 298W | 21ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
SI7852ADP-T1-GE3 |
|
|
VISHAY SILICONIX | SMT | PPAKSO8 | Trench FET | N-CH | 30A | 80V | 14m Ohms | 62.5W | 46ns | Single | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
SIS434DN-T1-GE3 |
44.322
|
|
VISHAY SILICONIX | SMT | PPAK1212-8 | Trench FET | N-CH | 35A | 40V | 6.3m Ohms | 52W | 30ns | Single | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
SQ2308CES-T1_GE3 |
|
|
VISHAY SILICONIX | SMT | SOT23-3 | Trench FET | N-CH | 2.3A | 60V | 125m Ohms | 2W | N/A | Single | N/A | -55°C~+175°C | ROHS | TAPE&REEL | 3.000 | 2 |
|
|
SIRA12DP-T1-GE3 |
14.721
|
|
VISHAY SILICONIX | SMT | PPAKSO8 | Trench FET | N-CH | 25A | 30V | 3.2m Ohms | 31W | 27ns | Single | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
SQM110N05-06L_GE3 |
39.994
|
|
VISHAY SILICONIX | SMT | TO263-3 (D2PAK-3) | Trench FET | N-CH | 110A | 55V | 4.7m Ohms | 157W | N/A | Single | Automotive(AEC-Q101) | -55°C~+175°C | ROHS | TAPE&REEL | 800 | 1 |
|
|
SI7922DN-T1-GE3 |
|
|
VISHAY SILICONIX | SMT | PPAK1212-8 | Trench FET | N-CH | 1.8A | 100V | 162m Ohms | 1.3W | 40ns | Dual | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
SST4416A |
21.351
|
|
VISHAY SILICONIX | SMT | SOT23-3 | High Frequency | N-CH | 10mA | 15V | N/A | 300mW | N/A | Single | N/A | -55°C~+150°C | NON ROHS | TAPE&REEL | 2.500 | 2 |
|
IRFR310TRPBF |
9.990
|
|
VISHAY SILICONIX | SMT | TO252 (DPAK) | Power | N-CH | 1.7A | 400V | 3.6 Ohms | 25W | 240ns | Single | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 2.000 | 1 |
|
|
IRF830ASTRLPBF |
66.057
|
|
VISHAY SILICONIX | SMT | TO263-3 (D2PAK-3) | Power | N-CH | 5A | 500V | 1.4 Ohms | 74W | 430ns | Single | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 800 | 1 |
|
|
SI2318CDS-T1-GE3 |
20.679
|
|
VISHAY SILICONIX | SMT | SOT23-3 | Trench FET | N-CH | 5.6A | 40V | 35m Ohms | 2.1W | 15ns | Single | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
SQJB60EP-T1_GE3 |
110.443
|
|
VISHAY SILICONIX | SMT | PowerPAK SO-8L Dual | Trench FET | N-CH | 30A | 60V | 10m Ohms | 48W | N/A | Dual | Automotive(AEC-Q101) | -55°C~+175°C | ROHS | TAPE&REEL | 3.000 | 1 |
