Bulunan sonuçlar: 150 | | | | |
Bulunan sonuçlar: 150
| Görsel |
Ürün Adı
|
Stok
|
Miktar | Manufacturer |
Series
|
Diode
Configuration |
Mounting
Type |
Package
/
Case |
Polarity
|
Average
Rectified
Current |
Peak
Repetitive
Reverse
Voltage
(VRRM) |
Reverse
Recovery
Time
(Trr) |
Applications
|
Operating
Temperature |
Rohs
|
Packaging
|
Min.Paketleme Adedi |
Min.Sipariş Adedi |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WNSC2D04650Q |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | THT | TO220AC | N/A | 4A | 650V | N/A | General Purpose | +175°C | ROHS | TUBE | 50 | 1 |
|
|
WNSC6D06650Q |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | THT | TO220AC | N/A | 6A | 650V | N/A | General Purpose | -55°C~+175°C | ROHS | TUBE | 50 | 1 |
|
|
WNSC021200Q |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | THT | TO220AC | N/A | 2A | 1.2kV | N/A | General Purpose | +175°C | ROHS | TUBE | 50 | 1 |
|
WNSC10650T6J |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DFN8X8 | None | 10A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
WNSC2D12650TJ |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | SMT | DFN8X8 | None | 12A | 650V | N/A | General Purpose | +175°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
WNSC2D10650Q |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | THT | TO220AC | N/A | 10A | 650V | N/A | General Purpose | +175°C | ROHS | TUBE | 50 | 1 |
|
WNSC2D10650WQ |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | THT | TO247-2 | None | 10A | 650V | N/A | General Purpose | +175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSC6D20650WQ |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | THT | TO247-2 | None | 20A | 650V | N/A | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
NXPSC166506Q |
|
|
WEEN SEMICONDUCTORS | Silicon Carbide (SiC) Schottky | Single | THT | TO220AC | N/A | 16A | 650V | N/A | General Purpose | +175°C | ROHS | TUBE | 50 | 1 |
|
|
GD50MPS12H |
|
|
GENESIC SEMICONDUCTOR | Silicon Carbide (SiC) Schottky | Single | THT | TO247-2 | None | 86A | 1200V | N/A | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
