Bulunan sonuçlar: 9486 | | | | |
Bulunan sonuçlar: 9486
| Görsel |
Ürün Adı
|
Stok
|
Miktar |
Memory
Type |
Features
|
Manufacturer |
Mounting
Type |
Package
/
Case |
Memory
Size |
Speed(Hz)/AccessTime(Ns)
|
Interface
|
Supply
Voltage |
Operating
Temperature |
Rohs
|
Packaging
|
Min.Paketleme Adedi |
Min.Sipariş Adedi |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
AS4C256M16D3LB-12BCN |
|
|
DRAM | IC DRAM 4G PARALLEL 96FBGA | ALLIANCE | SMT | FBGA96 | 4Gbit | N/A | N/A | N/A | N/A | ROHS | TRAY | 180 | 1 |
|
|
AS4C256M16D3LB-10BCN |
|
|
DRAM | 4G DDR3 256MX16 1.35V 96-BALL FB | ALLIANCE | SMT | FBGA96 | 256M x 16 | N/A | N/A | N/A | N/A | ROHS | TRAY | 180 | 1 |
|
AS8C801801-QC150N |
|
|
SRAM | IC SRAM 9M PARALLEL 100TQFP | ALLIANCE | SMT | TQFP100 | 9Mbit (512K x 18) | 150MHz | Parallel | 3.135V to 3.465V | 0°C~+70°C | ROHS | TRAY | 10 | 1 |
|
|
AS8C803625-QC75N |
|
|
SRAM | IC SRAM 9M PARALLEL 100TQFP | ALLIANCE | SMT | TQFP100 | 9Mbit (256K x 36) | 117MHz | Parallel | 3.135V to 3.465V | 0°C~+70°C | ROHS | TRAY | 10 | 1 |
|
|
AS4C256M16D3B-12BCN |
|
|
DRAM | IC DRAM 4G PARALLEL 96FBGA | ALLIANCE | SMT | FBGA96 | 4Gbit | N/A | N/A | N/A | N/A | ROHS | TRAY | 180 | 1 |
|
|
K4B4G1646D-BCK0 |
|
|
SDRAM | 4Gb D-die DDR3 SDRAM | SAMSUNG | SMT | FBGA96 | 4Gbit | N/A | N/A | 1.5V | -40°C~+85°C | ROHS | TRAY | 112 | 1 |
|
W25Q01JVSFIQ-TR |
|
|
FLASH | N/A | WINBOND | SMT | SOIC16 | 1Gbit (128M x 8) | 133 MHz, 7.5 ns | SPI - Quad I/O | 2.7V to 3.6V | -40°C~+85°C | ROHS | TAPE&REEL | 1.000 | 1 |
|
W25Q01JVZEIQ-TR |
|
|
FLASH | N/A | WINBOND | SMT | WSON8 | 1Gbit (128M x 8) | 133 MHz, 7.5 ns | SPI - Quad I/O | 2.7V to 3.6V | -40°C~+85°C | ROHS | TAPE&REEL | 4.000 | 1 |
|
|
W25Q01JVZEIQ-TUBE |
|
|
FLASH | N/A | WINBOND | SMT | WSON8 | 1Gbit (128M x 8) | 133 MHz, 7.5 ns | SPI - Quad I/O | 2.7V to 3.6V | -40°C~+85°C | ROHS | TUBE | 63 | 1 |
|
S25HS512TFANHI010 |
|
|
N/A | N/A | CYPRESS SEMI. | SMT | WSON8 | N/A | N/A | N/A | N/A | N/A | ROHS | TRAY | 100 | 1 |
|
W66CQ2NQUAFI-TRAY |
|
|
DRAM | 4Gb LPDDR4X | WINBOND | SMT | WFBGA200 (10x14.5) | 4Gbit (512 x 8) | N/A | LVSTL06 | 1.8V, 1.1V, 0.6V | -40°C~+105°C | ROHS | TRAY | 144 | 1 |
|
|
W66CP2NQUAFI-TR |
|
|
DRAM | N/A | WINBOND | SMT | WFBGA200 | 4Gbit | N/A | N/A | N/A | N/A | N/A | TAPE&REEL | 2.500 | 1 |
|
MT29F2G08ABAEAWP-IT:E TR |
|
|
FLASH | NAND FLASH MEMORY | MICRON | SMT | TSOP48 | 2Gbit | NONE | Parallel | 2.7V to 3.6V | -40°C~+85°C | N/A | TAPE&REEL | 1.000 | 1 |
|
C27210-250V05 |
122
|
|
EPROM | WORD WIDE EPROM | INTEL | THT | DIP40 | 1Mbit | 200ns | I2C, 2-Wire Serial | 4.5V to 5.5V | -55°C~+125°C | N/A | TUBE | 10 | 1 |
|
|
MT29F64G08CBAAAWP:A |
|
|
FLASH | NAND FLASH MEMORY | MICRON | SMT | TSOP48 | 64Gbit | NONE | Parallel | 2.7V to 3.6V | 0°C~+70°C | ROHS | BULK | 1.000 | 1 |
|
SST25VF064C-80-4I-S3AE |
|
|
FLASH | SPI SERIAL DUAL I/O FLASH | MICROCHIP | SMT | SOIC8 | 64Mbit | 80MHz | SPI Serial | 2.7V to 3.6V | -40°C~+85°C | ROHS | TUBE | 68 | 1 |
|
|
W25Q01JVSFIQ-TUBE |
528
|
|
FLASH | N/A | WINBOND | SMT | SOIC16 | 1Gbit (128M x 8) | 133 MHz, 7.5 ns | SPI - Quad I/O | 2.7V to 3.6V | -40°C~+85°C | ROHS | TUBE | 44 | 1 |
|
M48Z35Y-70PC1 |
|
|
SRAM | 256 Kbit (32 Kbit x 8) ZEROPOWER SRAM | STM | THT | PCDIP28 | 256Kbit (32K x 8) | 70ns | Parallel | 4.5V to 5.5V | 0°C~+70°C | ROHS | TUBE | 12 | 1 |
|
|
CY14MB064Q2A-SXQ |
|
|
SRAM | 64-Kbit (8K × 8) SPI nvSRAM with Extended Temperature | CYPRESS SEMI. | SMT | SOIC8 | 64Kbit (8K x 8) | 40MHz | SPI | 2.7V to 3.6V | -40°C~+105°C | ROHS | TUBE | 97 | 1 |
|
|
M48Z08-100PC1 |
|
|
SRAM | 5 V, 16 kbit (2 Kb x 8) ZEROPOWER SRAM | STM | THT | PCDIP28 | 64Kbit (8K x 8) | 100ns | Parallel | 4.75V to 5.5V | 0°C~+70°C | ROHS | TUBE | 12 | 1 |
