Bulunan sonuçlar: 4950 | | | | |
Bulunan sonuçlar: 4950
| Görsel |
Ürün Adı
|
Stok
|
Miktar | Manufacturer |
Mounting
Type |
Package
/
Case |
Technology
|
Fet
Type |
Current
(25°C) |
Voltage
|
Rds
On |
Power
Dissipation |
Trr
|
Configuration
|
Applications
|
Operating
Temperature |
Rohs
|
Packaging
|
Min.Paketleme Adedi |
Min.Sipariş Adedi |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WPM1481-6TR |
1.891
|
|
WILLSEMI | SMT | DFN2x2-6L | Power | P-CH | 6.5A | 12V | 24m Ohms | 1.4W | N/A | Single | General Purpose | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
WNSCM160120WQ |
|
|
WEEN SEMICONDUCTORS | THT | TO247-3 | Silicon Carbide (SiC) | N-CH | 24A | 1.2kV | 160m Ohms | 155W | 38ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSC2M1K0170WQ |
|
|
WEEN SEMICONDUCTORS | THT | TO247-3 | Silicon Carbide (SiC) | N-CH | 7A | 1.7kV | 1 Ohms | 79W | 36ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSCM80120WQ |
|
|
WEEN SEMICONDUCTORS | THT | TO247-3 | Silicon Carbide (SiC) | N-CH | 42A | 1.2kV | 80m Ohms | 230W | 36ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
WNSC2M20120R6Q |
774
|
|
WEEN SEMICONDUCTORS | THT | TO247-4L | Silicon Carbide (SiC) | N-CH | 133A | 1.2kV | 20m Ohms | 750W | 54ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSC2M75120W6Q |
257
|
|
WEEN SEMICONDUCTORS | THT | TO247-3 | Silicon Carbide (SiC) | N-CH | 33.7A | 1.2kV | 75m Ohms | 184W | 21ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSC2M40120R6Q |
274
|
|
WEEN SEMICONDUCTORS | THT | TO247-4L | Silicon Carbide (SiC) | N-CH | 73A | 1.2kV | 40m Ohms | 405W | 52ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSCM80120RQ |
|
|
WEEN SEMICONDUCTORS | THT | TO247-4L | Silicon Carbide (SiC) | N-CH | 45A | 1.2kV | 80m Ohms | 270W | 36ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSC2M75120R6Q |
261
|
|
WEEN SEMICONDUCTORS | THT | TO247-4L | Silicon Carbide (SiC) | N-CH | 42.8A | 1.2kV | 75m Ohms | 298W | 21ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
|
WNSC2M40120W6Q |
263
|
|
WEEN SEMICONDUCTORS | THT | TO247-3 | Silicon Carbide (SiC) | N-CH | 64A | 1.2kV | 40m Ohms | 306W | 52ns | Single | General Purpose | -55°C~+175°C | ROHS | TUBE | 30 | 1 |
|
SI7439DP-T1-GE3 |
2.996
|
|
VISHAY SILICONIX | SMT | PPAKSO8 | Trench FET | P-CH | 3A | 150V | 73m Ohms | 1.9W | 100ns | Single | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
SQ2308CES-T1_GE3 |
|
|
VISHAY SILICONIX | SMT | SOT23-3 | Trench FET | N-CH | 2.3A | 60V | 125m Ohms | 2W | N/A | Single | N/A | -55°C~+175°C | ROHS | TAPE&REEL | 3.000 | 2 |
|
|
SIRA12DP-T1-GE3 |
14.741
|
|
VISHAY SILICONIX | SMT | PPAKSO8 | Trench FET | N-CH | 25A | 30V | 3.2m Ohms | 31W | 27ns | Single | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
SI7852ADP-T1-GE3 |
|
|
VISHAY SILICONIX | SMT | PPAKSO8 | Trench FET | N-CH | 30A | 80V | 14m Ohms | 62.5W | 46ns | Single | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
SI7922DN-T1-GE3 |
|
|
VISHAY SILICONIX | SMT | PPAK1212-8 | Trench FET | N-CH | 1.8A | 100V | 162m Ohms | 1.3W | 40ns | Dual | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
SQM110N05-06L_GE3 |
39.994
|
|
VISHAY SILICONIX | SMT | TO263-3 (D2PAK-3) | Trench FET | N-CH | 110A | 55V | 4.7m Ohms | 157W | N/A | Single | Automotive(AEC-Q101) | -55°C~+175°C | ROHS | TAPE&REEL | 800 | 1 |
|
|
SI7623DN-T1-GE3 |
|
|
VISHAY SILICONIX | SMT | PPAK1212-8 | Trench FET | P-CH | 35A | 20V | 3.1m Ohms | 52W | 25ns | Single | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
SI2323CDS-T1-GE3 |
11.926
|
|
VISHAY SILICONIX | SMT | SOT23-3 | Trench FET | P-CH | 6A | 20V | 32m Ohms | 2.5W | 30ns | Single | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
SI2333DS-T1-E3 |
23.880
|
|
VISHAY SILICONIX | SMT | SOT23-3 | Trench FET | P-CH | 4.1A | 12V | 25m Ohms | 750mW | N/A | Single | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
|
|
SIS434DN-T1-GE3 |
47.574
|
|
VISHAY SILICONIX | SMT | PPAK1212-8 | Trench FET | N-CH | 35A | 40V | 6.3m Ohms | 52W | 30ns | Single | N/A | -55°C~+150°C | ROHS | TAPE&REEL | 3.000 | 1 |
